IRFR220NTRL
MOSFET N-CH 200V 5A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR220NTRL is an N-channel power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 5A at 25°C, with a maximum power dissipation of 43W (Tc). The IRFR220NTRL offers a typical On-Resistance (Rds On) of 600mOhm at 2.9A and 10V Vgs. It is packaged in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. Key parameters include a Gate Charge (Qg) of 23 nC at 10V Vgs and an Input Capacitance (Ciss) of 300 pF at 25V Vds. This device is suitable for use in industrial power supplies and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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