IRFR220NTR
MOSFET N-CH 200V 5A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR220NTR is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 5 A at 25°C, with a maximum power dissipation of 43 W (Tc). The IRFR220NTR offers a low on-resistance (Rds On) of 600 mOhm at 2.9 A and 10 V, facilitated by its advanced MOSFET technology.
The device is packaged in a TO-252-3, DPAK (SC-63) surface-mount package, supplied on tape and reel (TR). Key electrical characteristics include a gate charge (Qg) of 23 nC at 10 V and an input capacitance (Ciss) of 300 pF at 25 V. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±20 V and a threshold voltage (Vgs(th)) of 4 V at 250 µA. This MOSFET is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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