IRFR18N15DTRRP
MOSFET N-CH 150V 18A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR18N15DTRRP is an N-Channel power MOSFET designed for demanding applications. This device features a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 18A at 25°C (Tc). The low on-resistance of 125mOhm is achieved at 11A and 10V gate drive voltage. With a maximum power dissipation of 110W (Tc), it is suitable for high-power switching and control circuits. The TO-252AA (DPAK) surface mount package offers efficient thermal management. Key parameters include a gate charge (Qg) of 43nC at 10V and input capacitance (Ciss) of 900pF at 25V. This MOSFET is utilized in industrial automation, power supply design, and automotive systems requiring robust power switching. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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