IRFR18N15DTRLP
MOSFET N-CH 150V 18A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR18N15DTRLP is an N-Channel Power MOSFET designed for demanding applications. This device features a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 18A at 25°C (Tc). With a low on-resistance (Rds On) of 125mOhm maximum at 11A and 10V Vgs, it minimizes conduction losses. The device offers a gate charge (Qg) of 43nC maximum at 10V and an input capacitance (Ciss) of 900pF maximum at 25V. Packaged in a TO-252AA (DPAK) surface-mount configuration, it is supplied on tape and reel. This MOSFET is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 11A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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