IRFR18N15D
MOSFET N-CH 150V 18A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFR18N15D. This device offers a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 18A at 25°C (Tc). The IRFR18N15D features a low on-resistance (Rds On) of 125mOhm maximum at 11A and 10V Vgs. With a maximum power dissipation of 110W (Tc), it is designed for demanding applications. The device utilizes MOSFET technology and is packaged in a TO-252AA (DPAK) surface mount configuration. Key electrical parameters include a gate charge (Qg) of 43 nC maximum at 10V and input capacitance (Ciss) of 900 pF maximum at 25V. Operating temperature range is -55°C to 175°C (TJ). This component is commonly found in power supplies, motor control, and industrial automation systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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