IRFR15N20DTRRP
MOSFET N-CH 200V 17A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR15N20DTRRP is an N-Channel Power MOSFET configured for high-efficiency switching applications. This device features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 17A at 25°C (Tc). With a low on-resistance (Rds On) of 165mOhm maximum at 10A and 10V, it minimizes conduction losses. The device offers a gate charge (Qg) of 41 nC maximum at 10V and an input capacitance (Ciss) of 910 pF maximum at 25V. Packaged in a surface-mount TO-252AA (DPAK) for automated assembly, it supports a maximum power dissipation of 3W (Ta) or 140W (Tc). Operating temperature range is -55°C to 175°C (TJ). This component is widely utilized in industrial power supplies, automotive systems, and lighting control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V |
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