IRFR13N20DTRR
MOSFET N-CH 200V 13A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR13N20DTRR is a high-performance N-Channel Power MOSFET. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 13A at 25°C (Tc). With a maximum power dissipation of 110W (Tc) and a low on-resistance (Rds On) of 235mOhm at 8A and 10V gate drive, it is optimized for efficient power switching. Key parameters include a gate charge (Qg) of 38nC at 10V and input capacitance (Ciss) of 830pF at 25V. The device is housed in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel (TR). Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for applications in industrial power supplies, motor control, and lighting.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V |