IRFR13N20DTRPBF
MOSFET N-CH 200V 13A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR13N20DTRPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 200 V and a continuous drain current (Id) capability of 13 A at 25°C. The device offers a low on-resistance (Rds On) of 235 mOhm maximum at 8 A and 10 V gate drive. With a power dissipation of 110 W (Tc), it is suitable for surface mount installations within the TO-252AA (DPAK) package. Key parameters include a gate charge (Qg) of 38 nC maximum at 10 V and input capacitance (Ciss) of 830 pF maximum at 25 V. Operating temperatures range from -55°C to 175°C (TJ). This MOSFET is utilized in various industrial sectors, including automotive, industrial power control, and consumer electronics. The packaging is supplied on Tape & Reel (TR).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V |
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