IRFR13N20DPBF
MOSFET N-CH 200V 13A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR13N20DPBF is an N-Channel Power MOSFET featuring a 200V drain-source voltage. This component offers a continuous drain current of 13A at 25°C (Tc) and a maximum power dissipation of 110W (Tc). The on-resistance (Rds On) is specified at 235mOhm maximum at 8A, 10V. It is packaged in a TO-252AA (DPAK) surface mount configuration. Key characteristics include a gate charge (Qg) of 38 nC maximum at 10V and input capacitance (Ciss) of 830 pF maximum at 25V. This device is suitable for applications in industrial and automotive sectors. It operates within a temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) up to ±30V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
