IRFR13N15DTRPBF
MOSFET N-CH 150V 14A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR13N15DTRPBF is an N-Channel Power MOSFET designed for demanding applications. This surface mount device features a Drain-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 14A at 25°C (Tc). The Rds On is specified at a maximum of 180mOhm at 8.3A and 10V gate drive. With a total power dissipation of 86W (Tc), it is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 29nC and input capacitance (Ciss) of 620pF at 25V. The component operates within a temperature range of -55°C to 175°C and is supplied in a TO-252AA (DPAK) package on tape and reel. This MOSFET finds utility in industrial automation, power supply units, and renewable energy systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |