IRFR13N15DTR
MOSFET N-CH 150V 14A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFR13N15DTR, features a 150V drain-source breakdown voltage and a continuous drain current of 14A at 25°C (Tc). This device offers a maximum on-resistance of 180mOhm at 8.3A and 10V Vgs. The gate charge is specified at 29 nC maximum at 10V, with input capacitance (Ciss) at 620 pF maximum at 25V. Designed for surface mounting, it utilizes the TO-252AA (DPAK) package. Power dissipation is rated at 86W (Tc). Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in industrial and automotive sectors requiring high-efficiency power switching. The component is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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