IRFR13N15DPBF
MOSFET N-CH 150V 14A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR13N15DPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 150V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 14A at 25°C. The device offers a low on-resistance (Rds On) of 180mOhm maximum at 8.3A and 10V Vgs, contributing to efficient power conversion. With a maximum power dissipation of 86W at 25°C case temperature, it is suitable for high-power density designs. The TO-252AA (DPAK) surface mount package facilitates integration into compact circuit layouts. Typical applications include power supplies, motor control, and automotive systems where robust performance is essential. Key electrical characteristics include a gate charge (Qg) of 29 nC maximum and input capacitance (Ciss) of 620 pF maximum.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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