IRFR12N25DTRPBF
MOSFET N-CH 250V 14A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFR12N25DTRPBF, features a 250V drain-source voltage (Vdss) and a continuous drain current (Id) of 14A at 25°C. This surface mount device, housed in a TO-252AA (DPAK) package, offers a maximum on-resistance (Rds On) of 260mOhm at 8.4A and 10V gate-source voltage. The N-Channel MOSFET technology provides a maximum power dissipation of 144W (Tc). Key electrical characteristics include a typical gate charge (Qg) of 35 nC at 10V and input capacitance (Ciss) of 810 pF at 25V. The device operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in the industrial and automotive sectors. The packaging is Tape & Reel (TR).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 25 V |