IRFR12N25DPBF
MOSFET N-CH 250V 14A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR12N25DPBF is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 250V Drain-Source Voltage (Vdss) and a continuous drain current capability of 14A (Tc) at 25°C. With a maximum Power Dissipation of 144W (Tc) and a low Rds On of 260mOhm at 8.4A and 10V gate drive, it offers efficient power handling. The MOSFET utilizes advanced HEXFET® technology for reliable operation across an extended temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 35 nC @ 10V and input capacitance (Ciss) of 810 pF @ 25V. The TO-252AA (DPAK) surface mount package facilitates integration into compact board designs. This component is suitable for use in industrial power supplies and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 25 V |
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