IRFR120ZTRPBF
MOSFET N-CH 100V 8.7A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRFR120ZTRPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 8.7A at 25°C. With a maximum on-resistance (Rds On) of 190mOhm at 5.2A and 10V gate-source voltage, it offers efficient power switching. The device boasts a low gate charge (Qg) of 10 nC at 10V and an input capacitance (Ciss) of 310 pF at 25V. It is housed in a TO-252AA (DPAK) surface-mount package, rated for a maximum power dissipation of 35W (Tc). Operating across a wide temperature range of -55°C to 175°C, this MOSFET is suitable for use in automotive, industrial, and telecommunications sectors. The part is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |