IRFR120NTRRPBF
MOSFET N-CH 100V 9.4A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFR120NTRRPBF. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 9.4A at 25°C (Tc). With a maximum on-resistance of 210mOhm at 5.6A and 10V Vgs, it offers efficient power switching. The device is housed in a TO-252AA (DPAK) surface-mount package and is supplied on tape and reel. Key parameters include a gate charge of 25nC (max) at 10V and input capacitance of 330pF (max) at 25V. This MOSFET is suitable for applications requiring robust power handling in a compact footprint, commonly found in power supply units and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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