IRFR120NCTRLPBF
MOSFET N-CH 100V 9.4A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFR120NCTRLPBF, is designed for demanding applications. This component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 9.4A at 25°C. The Rds(on) is specified at a maximum of 210mOhm at 5.6A and 10V gate-source voltage. With a maximum power dissipation of 48W (Tc), this MOSFET is suitable for power management in industrial and automotive sectors. The device is supplied in a TO-252AA (DPAK) surface-mount package, facilitating efficient board layout. Key electrical characteristics include a gate charge (Qg) of 25nC (max) at 10V and input capacitance (Ciss) of 330pF (max) at 25V. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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