IRFR120NCPBF
MOSFET N-CH 100V 9.4A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRFR120NCPBF is an N-Channel Power MOSFET designed for efficient switching applications. Featuring a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 9.4A at 25°C, this component offers a typical Rds(on) of 210mOhm at 5.6A and 10V gate drive. The device boasts a low gate charge (Qg) of 25 nC at 10 V and an input capacitance (Ciss) of 330 pF at 25 V. With a maximum power dissipation of 48W (Tc), it is suitable for demanding thermal environments. The IRFR120NCPBF is packaged in a TO-252AA (DPAK) surface mount configuration, facilitating integration into automated assembly processes. This MOSFET is commonly utilized in power management, industrial automation, and consumer electronics. The operating temperature range is specified from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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