IRFR1205TRL
MOSFET N-CH 55V 44A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR1205TRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 44A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 27mOhm maximum at 26A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 107W (Tc), it is suitable for demanding power management tasks. The IRFR1205TRL is packaged in a TO-252AA (DPAK) surface-mount case and supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 65 nC maximum at 10V and input capacitance (Ciss) of 1300 pF maximum at 25V. This MOSFET is employed in industries such as automotive, industrial power control, and consumer electronics requiring robust power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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