IRFR1010ZTRRPBF
MOSFET N-CH 55V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR1010ZTRRPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 42A at 25°C (Tc), with a maximum power dissipation of 140W (Tc). The low on-resistance of 7.5mOhm at 42A and 10V gate drive voltage, coupled with a gate charge (Qg) of 95 nC at 10V, ensures efficient switching performance.
The device utilizes advanced MOSFET technology and is housed in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. Key specifications include an input capacitance (Ciss) of 2840 pF at 25V and an operating temperature range of -55°C to 175°C (TJ). This robust component is suitable for use in power management, automotive, and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V |