IRFR1010Z
MOSFET N-CH 55V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR1010Z is an N-Channel power metal oxide semiconductor field-effect transistor designed for high-efficiency switching applications. This component offers a 55V drain-source breakdown voltage and a continuous drain current capability of 42A at 25°C case temperature, with a maximum power dissipation of 140W (Tc). Key electrical characteristics include a low on-resistance of 7.5mOhm maximum at 42A and 10V Vgs, and a gate charge of 95nC maximum at 10V Vgs. Input capacitance (Ciss) is specified at 2840pF maximum. The device features a threshold voltage (Vgs(th)) of 4V maximum at 100µA and can withstand a gate-source voltage of ±20V. It is housed in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly processes. The operating junction temperature range is -55°C to 175°C. This MOSFET is utilized in industries such as automotive, industrial power supplies, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V |
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