IRFR024NTRRPBF
MOSFET N-CH 55V 17A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFR024NTRRPBF. This device features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 17A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 75mOhm at 10A and 10V gate-source voltage. With a gate charge (Qg) of 20nC (max) at 10V and input capacitance (Ciss) of 370pF (max) at 25V, this MOSFET is suitable for applications requiring efficient switching. It is housed in a TO-252AA (DPAK) surface mount package and supplied in Tape & Reel (TR) packaging. The maximum power dissipation is 45W (Tc). This component is commonly utilized in industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |