IRFR024NTRLPBF
MOSFET N-CH 55V 17A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR024NTRLPBF is a N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 55 V. This component features a continuous drain current (Id) of 17A (Tc) and a maximum power dissipation of 45W (Tc). The Rds On is specified at a maximum of 75mOhm at 10A, 10V, with a gate drive voltage of 10V. Key parameters include a gate charge (Qg) of 20 nC @ 10 V and input capacitance (Ciss) of 370 pF @ 25 V. The device is housed in a TO-252-3, DPAK package for surface mounting and operates within a temperature range of -55°C to 175°C. This MOSFET is suitable for applications in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
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