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IRFPS3810

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IRFPS3810

MOSFET N-CH 100V 170A SUPER247

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRFPS3810 is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) capability of 170A at 25°C (Tc). With a maximum Power Dissipation of 580W (Tc) and a low on-resistance (Rds On) of 9mOhm at 100A and 10V, it is suitable for demanding power conversion scenarios. The SUPER-247™ (TO-274AA) through-hole package ensures robust thermal management. Key parameters include a Gate Charge (Qg) of 390 nC at 10V and Input Capacitance (Ciss) of 6790 pF at 25V. This device finds application in industrial power supplies, automotive systems, and renewable energy inverters. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bag
Technical Details:
PackagingBag
Package / CaseTO-274AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C170A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)580W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageSUPER-247™ (TO-274AA)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6790 pF @ 25 V

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