IRFP9140N
MOSFET P-CH 100V 23A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFP9140N is a P-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 23A at 25°C (Tc). With a maximum power dissipation of 140W (Tc) and a low on-resistance (Rds On) of 117mOhm at 13A, 10V, it ensures efficient power handling. The device utilizes advanced MOSFET technology and is packaged in a TO-247AC through-hole package for robust thermal performance. Key parameters include a gate charge (Qg) of 97 nC @ 10 V and input capacitance (Ciss) of 1300 pF @ 25 V. The operating temperature range is -55°C to 175°C (TJ), making it suitable for industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 97 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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