IRFP7718PBF
MOSFET N-CH 75V 195A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRFP7718PBF is a high-performance N-Channel Power MOSFET from the StrongIRFET™ series, packaged in a TO-247AC through-hole format. This device offers a maximum drain-source voltage (Vdss) of 75V and a continuous drain current (Id) of 195A at 25°C, with a maximum power dissipation of 517W. Key electrical parameters include a low on-resistance (Rds On) of 1.8mOhm at 100A and 10V, and a gate charge (Qg) of 830 nC at 10V. Input capacitance (Ciss) is measured at 29550 pF at 25V. The operating temperature range is -55°C to 175°C, making it suitable for demanding applications. This component is commonly utilized in industrial power supplies, motor control, and electric vehicle charging systems.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 517W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 830 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 29550 pF @ 25 V |
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