IRFP4410ZPBF
MOSFET N-CH 100V 97A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFP4410ZPBF, offers a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 97A at 25°C. This through-hole component, packaged in a TO-247AC, features a low on-resistance of 9mOhm at 58A and 10V. Key parameters include a gate charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 4820 pF at 50V. The device has a maximum power dissipation of 230W (Tc) and an operating temperature range of -55°C to 175°C. This MOSFET is suitable for applications in industrial automation, power supplies, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 97A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4820 pF @ 50 V |
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