IRFP4332-203PBF
MOSFET N-CH 250V 57A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET, part number IRFP4332-203PBF, is an N-Channel power MOSFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 57A at 25°C, with a maximum power dissipation of 360W at the same temperature. The ON-state resistance (Rds On) is specified at a maximum of 33mOhm when driven with 10V at 35A. Key electrical parameters include a Gate Charge (Qg) of 150 nC at 10V, and an input capacitance (Ciss) of 5860 pF at 25V. It operates within an extended temperature range of -40°C to 175°C (TJ). The component is housed in a standard TO-247AC package and is suitable for mounting via through-hole methods. This MOSFET is commonly utilized in industrial power supplies, motor control, and automotive applications where robust power handling is critical.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5860 pF @ 25 V |
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