IRFP4232PBF
MOSFET N-CH 250V 60A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFP4232PBF, offers a 250V drain-source voltage and a continuous drain current of 60A at 25°C (Tc). This through-hole component features a low on-resistance of 35.7mOhm maximum at 42A and 10V Vgs, with a maximum power dissipation of 430W (Tc). Key parameters include a gate charge of 240nC at 10V Vgs and input capacitance of 7290pF at 25V Vds. The device operates across a temperature range of -40°C to 175°C (TJ) and is housed in a TO-247AC package. This component is suitable for applications in industrial power supplies, motor control, and automotive systems requiring high power density and efficiency.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 35.7mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7290 pF @ 25 V |
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