IRFP4228PBF
MOSFET N-CH 150V 78A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFP4228PBF is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 78A at 25°C (Tc). Its low on-resistance (Rds On) of 15.5mOhm at 33A and 10V gate drive ensures efficient power transfer. The IRFP4228PBF boasts a maximum power dissipation of 310W (Tc) and a low gate charge (Qg) of 107 nC at 10V, contributing to fast switching speeds. With an input capacitance (Ciss) of 4530 pF at 25V and a maximum gate-source voltage (Vgs) of ±30V, it offers robust operation. This MOSFET is housed in a TO-247-3 package, suitable for through-hole mounting, and operates within a temperature range of -40°C to 175°C (TJ). It finds application in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4530 pF @ 25 V |
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