IRFP4137PBF
MOSFET N-CH 300V 38A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFP4137PBF is a 300V N-Channel power MOSFET designed for high-performance applications. This through-hole component, housed in a TO-247AC package, offers a continuous drain current of 38A (Tc) and a maximum power dissipation of 341W (Tc). Key parameters include a low on-resistance of 69mOhm at 24A and 10V, with a Vgs(th) of 5V at 250µA. The device features a gate charge of 125nC at 10V and an input capacitance (Ciss) of 5168pF at 50V. Operating across a temperature range of -55°C to 175°C, the IRFP4137PBF is suitable for demanding power conversion and switching applications in industries such as industrial automation, power supplies, and electric vehicle charging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 341W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5168 pF @ 50 V |