IRFP4127PBFAKMA1
TRENCH >=100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel Power MOSFET, part number IRFP4127PBFAKMA1, features a 200 V drain-source voltage and a continuous drain current of 75 A at 25°C (Tc). This through-hole component, housed in a TO-247-3 package, offers a maximum power dissipation of 341 W (Tc). With a low on-resistance of 21 mOhm at 44 A and 10 V gate drive, it utilizes advanced MOSFET technology. Key parameters include a gate charge of 150 nC at 10 V and an input capacitance of 5380 pF at 50 V. The operating temperature range is -55°C to 175°C (TJ). This device is suitable for applications in industrial power supplies, automotive systems, and high-power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 341W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5380 pF @ 50 V |
| Qualification | - |
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