IRFP4004PBF
MOSFET N-CH 40V 195A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFP4004PBF is a high-performance N-Channel Power MOSFET. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 195A at 25°C, with a maximum power dissipation of 380W (Tc). The on-resistance (Rds On) is a remarkably low 1.7mOhm at 195A and 10V gate drive. Key parameters include a gate charge (Qg) of 330 nC maximum at 10V and input capacitance (Ciss) of 8920 pF maximum at 25V. The device operates reliably across a wide temperature range of -55°C to 175°C (TJ). Packaged in a TO-247AC through-hole configuration, this MOSFET is suitable for demanding applications in power supply design, automotive electronics, and industrial motor control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8920 pF @ 25 V |