IRFP3703
MOSFET N-CH 30V 210A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFP3703 is an N-Channel Power MOSFET designed for high-current switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) capability of 210A at 25°C (Tc). The IRFP3703 offers a low on-resistance (Rds On) of 2.8mOhm maximum at 76A and 10V Vgs, contributing to efficient power transfer. Key parameters include a Gate Charge (Qg) of 209 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 8250 pF maximum at 25V Vds. With a maximum power dissipation of 230W at 25°C (Tc), the component is housed in a TO-247AC package suitable for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial power supplies, motor control, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 210A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 76A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 209 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8250 pF @ 25 V |
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