IRFP3415PBF
MOSFET N-CH 150V 43A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFP3415PBF, is a high-performance component designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 43A at 25°C, with a maximum Rds(on) of 42mOhm at 22A and 10V. The IRFP3415PBF offers a maximum power dissipation of 200W (Tc) and a gate charge (Qg) of 200 nC at 10V. Its TO-247AC package with through-hole mounting ensures robust thermal management and ease of integration. Engineered for industrial and automotive power conversion, motor control, and power supply systems, this MOSFET operates reliably across a wide temperature range from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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