IRFP22N50APBFXKMA1
MOSFET N-CH 500V 22A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFP22N50APBFXKMA1 is a 500V N-Channel power MOSFET with a continuous drain current rating of 22A at 25°C. This device features a maximum on-resistance of 230mOhm at 13A and 10V gate drive. Key parameters include a gate charge of 120 nC at 10V and input capacitance of 3450 pF at 25V. The MOSFET is housed in a TO-247AC package, suitable for through-hole mounting, and offers a maximum power dissipation of 277W. The operating temperature range is -55°C to 150°C. This component is utilized in applications such as power supplies, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 277W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3450 pF @ 25 V |
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