IRFP150N
MOSFET N-CH 100V 42A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRFP150N, offers a 100V drain-source voltage and a continuous drain current of 42A at 25°C (Tc). This device features a low on-resistance of 36mOhm at 23A, 10V (Vgs), and a maximum power dissipation of 160W (Tc). The IRFP150N utilizes TO-247AC through-hole packaging and operates across a temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 110 nC at 10V (Vgs) and input capacitance (Ciss) of 1900 pF at 25V (Vds). This component is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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