IRFP150MPBF
MOSFET N-CH 100V 42A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFP150MPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component offers a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 42A at 25°C (Tc). The device features a low on-resistance of 36mOhm maximum at 23A and 10V, contributing to reduced conduction losses. With a maximum power dissipation of 160W (Tc) and a gate charge (Qg) of 110 nC at 10V, it is suitable for demanding power conversion tasks. The IRFP150MPBF utilizes TO-247AC packaging for through-hole mounting, operating across a temperature range of -55°C to 175°C (TJ). Its robust design makes it applicable in industrial, automotive, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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