IRFP140N
MOSFET N-CH 100V 33A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFP140N. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 33A at 25°C (Tc). The IRFP140N offers a low on-resistance of 52mOhm maximum at 16A and 10V (Vgs). With a maximum power dissipation of 140W (Tc) and a Gate Charge (Qg) of 94 nC at 10V (Vgs), this MOSFET is suitable for demanding applications. It operates across a temperature range of -55°C to 175°C (TJ). The component is housed in a TO-247-3 package with a through-hole mounting type. This MOSFET is commonly utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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