IRFP1405
MOSFET N-CH 55V 95A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFP1405 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component offers a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 95A at 25°C, with a maximum power dissipation of 310W. Featuring a low on-resistance (Rds On) of 5.3mOhm at 95A and 10V drive voltage, it minimizes conduction losses. The device boasts a gate charge (Qg) of 180nC at 10V and input capacitance (Ciss) of 5600pF at 25V, ensuring efficient switching performance. Operating across a temperature range of -55°C to 175°C, the IRFP1405 is housed in a TO-247AC package for effective thermal management. This MOSFET is suitable for use in power supply units, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 25 V |
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