IRFP064VPBF
MOSFET N-CH 60V 130A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRFP064VPBF is a 60V N-channel power MOSFET designed for high-current applications. Featuring a low Rds(on) of 5.5mOhm at 78A and 10V Vgs, this component offers efficient power switching. Its continuous drain current capability is 130A at 25°C, with a maximum power dissipation of 250W. The device is housed in a TO-247AC package for through-hole mounting. Key parameters include a gate charge of 260nC at 10V and input capacitance of 6760pF at 25V. Operating temperature range is -55°C to 175°C. This MOSFET is suitable for use in power supply units, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 78A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6760 pF @ 25 V |
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