IRFP048N
MOSFET N-CH 55V 64A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® Series N-Channel Power MOSFET, part number IRFP048N. This through-hole device features a 55V drain-source breakdown voltage and a continuous drain current capability of 64A at 25°C (Tc). The IRFP048N offers a low on-resistance of 16 mOhm at 37A and 10V, with a maximum power dissipation of 140W (Tc). Key parameters include a gate charge (Qg) of 89 nC @ 10V and input capacitance (Ciss) of 1900 pF @ 25V. The device is housed in a TO-247AC package. This MOSFET is commonly utilized in industrial and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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