IRFP044N
MOSFET N-CH 55V 53A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFP044N. This component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 53A at 25°C (Tc). The Rds On is specified at a maximum of 20mOhm at 29A and 10V gate-source voltage. Key parameters include Gate Charge (Qg) of 61 nC and Input Capacitance (Ciss) of 1500 pF. The device is housed in a TO-247-3 package for through-hole mounting and offers a maximum power dissipation of 120W (Tc). It operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in high-power switching applications across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |