IRFM460
MOSFET N-CH 500V 19A TO254AAManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFM460 is an N-channel power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 19A at 25°C (Tc). The Rds On is specified at a maximum of 270mOhm when driven at 12A with a 10V gate-source voltage. Key parameters include a Gate Charge (Qg) of 190 nC at 10V and an Input Capacitance (Ciss) of 4300 pF at 25V. The device offers a maximum power dissipation of 250W (Tc) and is housed in a TO-254AA package with straight leads, suitable for through-hole mounting. This MOSFET is utilized in demanding applications within the industrial and power electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-254-3, TO-254AA (Straight Leads) |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-254AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 25 V |
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