IRFL4315PBF
MOSFET N-CH 150V 2.6A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFL4315PBF. This surface mount device features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 2.6A at 25°C. The Rds On is specified at a maximum of 185mOhm at 1.6A, 10V. With a maximum power dissipation of 2.8W (Ta), this MOSFET is suitable for applications requiring efficient power switching. Key parameters include a gate charge (Qg) of 19 nC @ 10V and input capacitance (Ciss) of 420 pF @ 25V. The SOT-223 package (TO-261-4, TO-261AA) facilitates integration into compact designs. This component finds application in industrial and telecommunications sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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