IRFL4310PBF
MOSFET N-CH 100V SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies MOSFET N-Channel, 100 V, 2.2A continuous drain current, designed for surface mount applications. This component features a 1W maximum power dissipation at 25°C ambient temperature and a low input capacitance of 330 pF maximum at 25V. The gate charge is specified at 25 nC maximum at 10V, with a maximum gate-source voltage rating of ±20V. The TO-261-4, TO-261AA package is supplied on tape and reel. This device is suitable for use in power management circuits across various industrial applications including automotive and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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