IRFL4105TR
MOSFET N-CH 55V 3.7A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® series IRFL4105TR is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 3.7 A at 25°C. The ON-resistance (Rds On) is a maximum of 45 mOhm at 3.7 A and 10 V gate drive. With a gate charge (Qg) of 35 nC at 10 V and input capacitance (Ciss) of 660 pF at 25 V, it offers robust performance characteristics. The device is housed in a SOT-223 (TO-261-4, TO-261AA) surface mount package, providing a power dissipation of 1W. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for various industrial and automotive applications requiring reliable power control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
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