IRFL4105
MOSFET N-CH 55V 3.7A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFL4105 is an N-channel power MOSFET designed for efficient switching applications. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 3.7A at 25°C, with a maximum power dissipation of 1W. The IRFL4105 exhibits a low on-resistance (Rds On) of 45mOhm at 3.7A and 10V gate-source voltage, contributing to reduced conduction losses. Its gate charge (Qg) is 35 nC maximum at 10V, facilitating faster switching speeds. The MOSFET is housed in a SOT-223 (TO-261-4, TO-261AA) surface-mount package, suitable for automated assembly. Key parameters include an input capacitance (Ciss) of 660 pF maximum at 25V and a threshold voltage (Vgs(th)) of 4V maximum at 250µA. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
