IRFL1006
MOSFET N-CH 60V 1.6A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IRFL1006, a HEXFET® N-Channel Power MOSFET. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 1.6A at 25°C. The device offers a low on-resistance (Rds On) of 220mOhm at 1.6A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 8 nC maximum at 10V and input capacitance (Ciss) of 160 pF maximum at 25V and 25V drain-source voltage, this MOSFET is suitable for various power management applications. The IRFL1006 is housed in a SOT-223 package, designed for surface mounting, and operates within an ambient temperature range of -55°C to 150°C. It is commonly utilized in industrial and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
