IRFL024Z
MOSFET N-CH 55V 5.1A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFL024Z is an N-channel power MOSFET featuring a 55V drain-source breakdown voltage and a continuous drain current capability of 5.1A at 25°C ambient. This device is housed in a SOT-223 (TO-261-4, TO-261AA) surface-mount package, offering a maximum power dissipation of 1W. With a typical Rds(on) of 57.5mOhm at 3.1A and 10V gate drive, it presents low conduction losses. Key parameters include a gate charge (Qg) of 14nC at 10V and an input capacitance (Ciss) of 340pF at 25V. The operating temperature range is -55°C to 150°C. This component is utilized in various industrial and automotive applications requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 57.5mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
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